GaN Systems Inc - Gallium Nitride Power Conversion Semiconductors - transistors

By: Gan Systems  09-12-2011
Keywords: Transistors

In the chart shown below, the material limits, 20V/µm for Si, 220V/µm for SiC and 300V/µm for GaN, are compared with the actual results described in various published refereed papers. In the case of the GaN Systems devices these results are calculated based on the additional gate width achieved by our unique island topology, described in our provisional patents. It is clear from both the Si and SiC results that these technologies are at or near their technology limit in the case of the simpler field effect structures.

The GaN limit however remains ahead of what has been achieved by GaN in practice. While our calculated results are two orders of magnitude better than the Si devices, they are not yet close to approaching the GaN limit. GaN devices are at a very early stage of development, compared to the 30 years of power device development of Si and 20 years of SiC. We expect there will be a five times improvement over the next five years and GaN transistors will achieve specific on-resistance results better than 0.6 This equates to a 30A/600V transistor (1cm.sq.) dissipating less than 1 Watt !

Our demonstration kit will provide devices that operate in the range 100-200V/60A and 600-1,000V/20A.  These designs achieve a Wg of 6 meters and 2 meters respectively when scaled to a 1cm.sq. device.

The devices shown are symetrical and offset gate, normally-on and normally-off, triode and tetrode transistors.

Keywords: Transistors

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GaN Systems Inc - Gallium Nitride Power Conversion Semiconductors - integratedsystems

This is due to the reduced switching and conduction losses of the low-voltage devices which overcompensate for the increased conduction losses caused by the higher number of series connected devices in the current path. This can easily be built using the island topology and the layout is highly efficient in terms of function per unit area, and the layout matrixes perfectly to allow a very large structure to be built.


GaN Systems Inc - Gallium Nitride Power Conversion Semiconductors - partnering

In addition to our own devices, we partner with other semiconductor companies to develop leading edge complementary products and in the development and manufacture of their own products. In conjunction with our layout designs we can offer process and packaging alternatives for those wishing to establish a GaN capability. To request more information on our partnering opportunities please contact our Head office or European office directly.


GaN Systems Inc - Gallium Nitride Power Conversion Semiconductors - products

Integrated single chip half-bridge structures, full-bridge diode arrays, and GaNTetrode™ devices for power and RF applications are also compatible with our unique island structure. Cool Switching™ – that summarizes the benifits of our unique island based topology and products – highly efficient low-loss diodes, transistors and integrated systems.


GaN Systems Inc - Gallium Nitride Power Conversion Semiconductors - diodes

GaN Systems’ Cool Switching™ high power diodes provide formerly unheard-of efficiencies, small size, no intrinsic charge storage and very low heat losses. In terms of overall system cost, our GaN based diodes are cost competitive with silicon, while offering superior performance to silicon carbide devices.